? semiconductor components industries, llc, 2010 april, 2010 ? rev. 7 1 publication order number: MJE18008/d MJE18008g, mjf18008g switchmode npn bipolar power transistor for switching power supply applications the mje/mjf18008g have an applications specific state ? of ? the ? art die designed for use in 220 v line ? operated switchmode power supplies and electronic light ballasts. features ? improved efficiency due to low base drive requirements: ? high and flat dc current gain h fe ? fast switching ? no coil required in base circuit for turn ? off (no current tail) ? tight parametric distributions are consistent lot ? to ? lot ? two package choices: standard to ? 220 or isolated to ? 220 ? mjf18008, case 221d, is ul recognized at 3500 v rms : file #e69369 ? these devices are pb ? free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter sustaining voltage v ceo 450 vdc collector ? base breakdown voltage v ces 1000 vdc emitter ? base voltage v ebo 9.0 vdc collector current ? continuous ? peak (note 1) i c i cm 8.0 16 adc base current ? continuous ? peak (note 1) i b i bm 4.0 8.0 adc rms isolation voltage (note 2) test no. 1 per figure 22a test no. 1 per figure 22b test no. 1 per figure 22c (for 1 sec, r.h. < 30%, t a = 25 c) v isol mjf18008 4500 3500 1500 v total device dissipation @ t c = 25 c MJE18008 mjf18008 derate above 25 c MJE18008 mjf18008 p d 125 45 1.0 0.36 w w/ c operating and storage temperature t j , t stg ? 65 to 150 c thermal characteristics characteristics symbol max unit thermal resistance, junction ? to ? case MJE18008 mjf18008 r jc 1.0 2.78 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 5 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle 10%. 2. proper strike and creepage distance must be provided. power transistor 8.0 amperes 1000 volts 45 and 125 watts to ? 220ab case 221a ? 09 style 1 1 http://onsemi.com marking diagrams 2 3 g = pb ? free package a = assembly location y = year ww = work week MJE18008g ayww see detailed ordering and shipping information in the package dimensions sect ion on page 7 of this data sheet. ordering information to ? 220 fullpack case 221d style 2 ul recognized 3 1 2 mjf18008g ayww *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
MJE18008g, mjf18008g http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise specified) ???????????????????? ???????????????????? characteristic ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ???????????????????? collector ? emitter sustaining voltage (i c = 100 ma, l = 25 mh) ???? ???? ??? ? ???? ??? vdc ???????????????????? ???????????????????? ???? ???? ???? ???? ? ??? ??? ???? ???? 100 ??? ??? adc ???????????????????? ???????????????????? ???????????????????? ???????????????????? c) collector cutoff current (v ce = 800 v, v eb = 0) (t c = 125 c) ???? ???? ???? ???? ???? ???? ???? ???? ? ? ? ??? ??? ??? ??? ???? ???? ???? ???? 100 500 100 ??? ??? ??? ??? adc ???????????????????? ???? ???? ? ??? ???? 100 ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics ???????????????????? ???????????????????? ???????????????????? base ? emitter saturation voltage (i c = 2.0 adc, i b = 0.2 adc) base ? emitter saturation voltage (i c = 4.5 adc, i b = 0.9 adc) ???? ???? ???? ???? ???? ???? ? ? ??? ??? ??? 0.82 0.92 ???? ???? ???? ??? ??? ??? ???????????????????? ???????????????????? ???????????????????? ???????????????????? ? emitter saturation voltage (i c = 2.0 adc, i b = 0.2 adc) (t c = 125 c) (i c = 4.5 adc, i b = 0.9 adc) (t c = 125 c) ???? ???? ???? ???? ???? ???? ???? ???? ? ? ? ? ??? ??? ??? ??? 0.3 0.3 0.35 0.4 ???? ???? ???? ???? ??? ??? ??? ??? ???????????????????? ???????????????????? ???????????????????? ???????????????????? ???????????????????? c) dc current gain (i c = 4.5 adc, v ce = 1.0 vdc) (t c = 125 c) dc current gain (i c = 2.0 adc, v ce = 1.0 vdc) (t c = 125 c) dc current gain (i c = 10 madc, v ce = 5.0 vdc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ? 6.0 5.0 11 11 10 ??? ??? ??? ??? ??? ? 28 9.0 8.0 15 16 20 ???? ???? ???? ???? ???? ? ? ? ? ? ? ??? ??? ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ???????????????????? ???????????????????? current gain bandwidth (i c = 0.5 adc, v ce = 10 vdc, f = 1.0 mhz) ???? ???? ???? ???? ? ??? ??? 13 ???? ???? ? ??? ??? mhz ???????????????????? ???????????????????? ???? ???? ???? ???? ? ??? ??? 100 ???? ???? ??? ??? ???????????????????? ???????????????????? ???? ???? ???? ???? ? ??? ??? 1750 ???? ???? ??? ??? ????????? ????????? ????????? ????????? ????????? ????????? ????????? s and 3.0 s respectively after rising i b1 reaches 90% of final i b1 (see figure 18) ????? ????? ????? ????? ???? ???? s ????? ????? c) ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ? ??? ??? 5.5 11.5 ???? ???? ? ? ??? ??? ??? ??? ??? ??? ??? vdc ???? ???? ???? s ????? ????? ????? c) ???? ???? ???? ? ? ??? ??? ??? 3.5 6.5 ???? ???? ???? ? ? ????? ????? ????? ????? (i c = 5.0 adc i b1 = 1.0 adc v cc = 300 v) ???? ???? s ????? ????? c) ???? ???? ? ? ??? ??? 11.5 14.5 ???? ???? ? ? ???? ???? ???? 3.0 s ????? ????? ????? c) ???? ???? ???? ? ? ??? ??? ??? 2.4 9.0 ???? ???? ???? ? ? ????????????????????????????????? switching characteristics: resistive load (d.c. 10%, pulse width = 20 s) ???????? ???????? ???????? ? on time ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ? ? ??? ??? ??? 200 190 ???? ???? ???? ? ??? ??? ??? ns ???????? ???????? ? off time ????? ????? c) ???? ???? ???? ???? ? ? ??? ??? 1.2 1.5 ???? ???? ? ??? ??? s ???????? ???????? ???????? ? on time ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ? ? ??? ??? ??? 100 250 ???? ???? ???? ? ??? ??? ??? ns ???????? ???????? ? off time ????? ????? c) ???? ???? ???? ???? ? ? ??? ??? 1.6 2.0 ???? ???? ? ??? ??? s ????????????????????????????????? ????????????????????????????????? switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 h) ???????? ???????? ???????? ????????? ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ? ? ??? ??? ??? 100 120 ???? ???? ???? ? ??? ??? ??? ns ???????? ???????? ????? ????? c) ???? ???? ???? ???? ? ? ??? ??? 1.5 1.9 ???? ???? ? ??? ??? s ???????? ???????? ????? ????? c) ???? ???? ???? ???? ? ? ??? ??? 250 230 ???? ???? ? ??? ??? ns ???????? ???????? ???????? ????????? ????????? ????????? ????????? ????????? ????????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ? ? ??? ??? ??? 85 135 ???? ???? ???? ? ??? ??? ??? ns ???????? ???????? ????? ????? c) ???? ???? ???? ???? ? ? ??? ??? 2.0 2.6 ???? ???? ? ??? ??? s ???????? ???????? ???????? ????? ????? ????? c) ???? ???? ???? ???? ???? ???? ? ? ??? ??? ??? 210 250 ???? ???? ???? ? ??? ??? ??? ns 3. pulse test: pulse width = 5.0 ms, duty cycle 10%. 4. proper strike and creepage distance must be provided.
MJE18008g, mjf18008g http://onsemi.com 3 h fe , dc current gain i c , collector current (amps) t j = 125 c c, capacitance (pf) 0.01 100 i c , collector current (amps) figure 1. dc current gain @ 1 volt h fe , dc current gain figure 2. dc current gain @ 5 volts v ce , voltage (volts) figure 3. collector saturation region figure 4. collector ? emitter saturation voltage figure 5. base ? emitter saturation region figure 6. capacitance 10 1 110 100 10 1 0.01 0.1 1 10 2 0.01 i b , base current (amps) 10 1 0.01 0.01 i c collector current (amps) 0.1 1.3 1 0.8 0.4 0.01 i c , collector current (amps) 0.1 1 10 1000 100 1 v ce , collector-emitter voltage (volts) 1 1000 1 0 0.1 110 10000 10 0.1 0.1 1 10 10 t j = 25 c t j = -20 c t j = 125 c t j = 25 c v ce , voltage (volts) i c /i b = 10 i c /i b = 5 v be , voltage (volts) 1.1 0.9 0.6 0.5 0.5 1.5 1.2 t j = 25 c 3 a 5 a 8 a 10 a t j = 25 c t j = 125 c t j = 25 c t j = 125 c i c /i b = 5 i c /i b = 10 t j = -20 c i c = 1 a 0.7 c ob 100 c ib typical static characteristics v ce = 1 v v ce = 5 v t j = 25 c f = 1 mhz
MJE18008g, mjf18008g http://onsemi.com 4 figure 7. resistive switching, t on figure 8. resistive switching, t off i c , collector current (amps) i c collector current (amps) i c , collector current (amps) 0 1500 i c , collector current (amps) t, time (ns) figure 9. inductive storage time, t si figure 10. inductive storage time, t si (h fe ) figure 11. inductive switching, t c and t fi i c /i b = 5 figure 12. inductive switching, t c and t fi i c /i b = 10 1000 0 48 2000 0 3500 3 h fe , forced gain 6 400 50 0 i c , collector current (amps) 48 250 200 50 2000 0 12 15 300 150 2 25 8 i c /i b = 5 t si , storage time (ns) 200 150 100 6 500 i c /i b = 10 48 26 500 1000 1500 2500 3000 3500 t, time (ns) t, time (ns) 13467 1000 1500 2500 9 5000 2000 0 500 1000 1500 2500 3000 3500 123 5 t, time (ns) 478 123 56 t, time (ns) 1 357 1 3 5 7 500 3000 4 5 7 8 10 11 13 14 250 100 i c /i b = 10 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h 4000 4500 300 350 i b(off) = i c /2 v cc = 300 v pw = 20 s i c /i b = 5 i c /i b = 10 t j = 125 c t j = 25 c 4500 4000 i c /i b = 5 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h i c = 2 a i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h 67 t fi t c t fi t c t j = 25 c t j = 125 c typical switching characteristics (i b2 = i c /2 for all switching) i c = 4.5 a i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h i b(off) = i c /2 v cc = 300 v pw = 20 s t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c
MJE18008g, mjf18008g http://onsemi.com 5 h fe , forced gain t c , crossover time (ns) 3 160 h fe , forced gain figure 13. inductive fall time t fi , fall time (ns) figure 14. inductive crossover time 60 515 400 200 50 4 67891011121314 70 80 140 35 15 4 67891011121314 300 100 i c = 2 a i c = 4.5 a t j = 25 c t j = 125 c 100 120 350 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h 150 130 110 90 150 250 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 h i c = 2 a i c = 4.5 a typical switching characteristics (i b2 = i c /2 for all switching) t j = 25 c t j = 125 c i c , collector current (amps) v ce , collector-emitter voltage (volts) i c , collector current (amps) figure 15. forward bias safe operating area figure 16. reverse bias switching safe operating area figure 17. forward bias power derating 100 10 v ce , collector-emitter voltage (volts) 9 6 0 0 200 1,0 0,8 0,2 0,0 20 t c , case temperature ( c) 80 140 160 1 0.01 3 600 1000 100 1000 dc (MJE18008) 5 ms power derating factor 0,6 0,4 10 0.1 extended soa 1 ms 10 s 1 s 400 2 1 4 5 40 60 100 120 second breakdown derating dc (mjf18008) 7 8 limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown in figure 15 may be found at any case temperature by using the appropriate curve on figure 17. t j(pk) may be calculated from the data in figure 20 and 21. at any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turn ? off with the base ? to ? emitter junction reverse ? biased. the safe level is specified as a reverse ? biased safe operating area (figure 16). this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 800 -1, 5 v -5 v t c 125 c i c /i b 4 l c = 500 h guaranteed safe operating area information thermal derating v be(off) = 0 v there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce
MJE18008g, mjf18008g http://onsemi.com 6 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 figure 18. dynamic saturation voltage measurements time v ce volts i b figure 19. inductive switching measurements 1 s 3 s 90% i b dyn 1 s dyn 3 s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi table 1. inductive load switching drive circuit +15 v 1 f 150 3 w 100 3 w mpf930 +10 v 50 common -v off 500 f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 3 w 100 f i out a 1 f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 mh rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 r b2 r b1
MJE18008g, mjf18008g http://onsemi.com 7 0.01 t, time (ms) figure 20. typical thermal response (z jc (t)) for MJE18008 r(t), transient thermal resistance (normalized) r jc (t) = r(t) r jc r jc = 1.0 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0.02 0.1 d = 0.5 single pulse 0.01 0.1 1 10 100 1000 0.1 1 0.05 typical thermal response 0.01 figure 21. typical thermal response (z jc (t)) for mjf18008 r(t), transient thermal resistance (normalized) r jc (t) = r(t) r jc r jc = 2.78 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 0.02 0.1 single pulse 0.01 0.1 1 10 100 100000 0.1 1 1000 10000 0.05 d = 0.5 t, time (ms) ordering information device package shipping MJE18008 to ? 220ab 50 units / rail MJE18008g to ? 220ab (pb ? free) 50 units / rail mjf18008 to ? 220 (fullpack) 50 units / rail mjf18008g to ? 220 (fullpack) (pb ? free) 50 units / rail
MJE18008g, mjf18008g http://onsemi.com 8 mounted fully isolated package leads heatsink 0.110 min figure 22a. screw or clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip mounted fully isolated package leads heatsink clip 0.099 min mounted fully isolated package leads heatsink 0.099 min figure 22b. clip mounting position for isolation test number 2 figure 22c. screw mounting position for isolation test number 3 test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is suf ficient to provide maximum power dissipation capability. the compres- sion washer helps to maintain a constant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 4 ? 40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 4 ? 40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. however, in order to positively ensure the package integrity of the fully isolated device, on semi- conductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 23. typical mounting techniques for isolated package figure 23a. screw ? mounted figure 23b. clip ? mounted mounting information** ** for more information about mounting power semiconductors see application note an1040.
MJE18008g, mjf18008g http://onsemi.com 9 package dimensions to ? 220ab case 221a ? 09 issue af style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j to ? 220 fullpak case 221d ? 03 issue g dim a min max min max millimeters 0.625 0.635 15.88 16.12 inches b 0.408 0.418 10.37 10.63 c 0.180 0.190 4.57 4.83 d 0.026 0.031 0.65 0.78 f 0.116 0.119 2.95 3.02 g 0.100 bsc 2.54 bsc h 0.125 0.135 3.18 3.43 j 0.018 0.025 0.45 0.63 k 0.530 0.540 13.47 13.73 l 0.048 0.053 1.23 1.36 n 0.200 bsc 5.08 bsc q 0.124 0.128 3.15 3.25 r 0.099 0.103 2.51 2.62 s 0.101 0.113 2.57 2.87 u 0.238 0.258 6.06 6.56 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. style 2: pin 1. base 2. collector 3. emitter
MJE18008g, mjf18008g http://onsemi.com 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. MJE18008/d switchmode is a trademark of semiconductor components industries, llc. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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